| Model |
MZ-V7S500B/AM |
| Device Type |
Internal Solid State Drive (SSD) |
| Form Factor |
M.2 2280 |
| Capacity |
500GB |
| Memory Components |
V-NAND, 3-bit MLC |
| Interface |
PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller |
Samsung Phoenix |
| Cache |
Samsung 512MB Low Power DDR4 SDRAM |
| Max Sequential Read |
Up to 3500 MBps |
| Max Sequential Write |
Up to 3200 MBps |
| 4KB Random Read (QD32/QD1) |
Up to 480,000/19,000 IOPS |
| 4KB Random Write (QD32/QD1) |
Up to 550,000/60,000 IOPS |
| MTBF |
1,500,000 hours |
| Power Consumption (Idle/Active) |
Max. 30mW / Average 5.8W, Maximum 9W (Burst mode) |
| Operating Temperature |
0°C ~ +70°C |
| Max Shock Resistance |
1,500G & 0.5 ms (Half sine) |
| Dimensions & Weight |
2.38mm x 22.15mm x 80.15mm, 8.00g |
المراجعات
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